PATENTS
HyperLight’s products benefit from patent protection worldwide. HyperLight is committed to developing and protecting its intellectual property. Listed below are select patents from HyperLight’s portfolio.
| 16/785,206 | LITHIUM NIOBATE DEVICES FABRICATED USING DEEP ULTRAVIOLET RADIATION |
| 17/346,061 | LITHIUM NIOBATE DEVICES FABRICATED USING DEEP ULTRAVIOLET RADIATION |
| 16/871,658 | ELECTRO OPTICAL DEVICES FABRICATED USING DEEP ULTRAVIOLET RADIATION |
| 18/404,701 | ELECTRO OPTICAL DEVICES FABRICATED USING DEEP ULTRAVIOLET RADIATION |
| 202180012732.0 | ELECTRO OPTICAL DEVICES FABRICATED USING DEEP ULTRAVIOLET RADIATION |
| 202511334816.2 | ELECTRO OPTICAL DEVICES FABRICATED USING DEEP ULTRAVIOLET RADIATION |
| 21751289.6 | ELECTRO OPTICAL DEVICES FABRICATED USING DEEP ULTRAVIOLET RADIATION |
| 2022-547825 | ELECTRO OPTICAL DEVICES FABRICATED USING DEEP ULTRAVIOLET RADIATION |
| 2024-202841 | ELECTRO OPTICAL DEVICES FABRICATED USING DEEP ULTRAVIOLET RADIATION |
| PCT/US21/16675 | ELECTRO OPTICAL DEVICES FABRICATED USING DEEP ULTRAVIOLET RADIATION |
| 63/017,215 | HIGH PERFORMANCE OPTICAL DEVICES |
| 17/335,915 | HIGH PERFORMANCE OPTICAL MODULATORS AND DRIVERS |
| 63/033,666 | HIGH PERFORMANCE OPTICAL MODULATOR |
| 19/346,019 | HIGH PERFORMANCE OPTICAL MODULATORS AND DRIVERS |
| 21818385.3 | HIGH PERFORMANCE OPTICAL MODULATORS AND DRIVERS |
| 202180050051.3 | HIGH PERFORMANCE OPTICAL MODULATORS AND DRIVERS |
| 21818385.3 | HIGH PERFORMANCE OPTICAL MODULATORS AND DRIVERS |
| 21818385.3 | HIGH PERFORMANCE OPTICAL MODULATORS AND DRIVERS |
| 26183973.2 | HIGH PERFORMANCE OPTICAL MODULATORS AND DRIVERS |
| 21818385.3 | HIGH PERFORMANCE OPTICAL MODULATORS AND DRIVERS |
| 21818385.3 | HIGH PERFORMANCE OPTICAL MODULATORS AND DRIVERS |
| 21818385.3 | HIGH PERFORMANCE OPTICAL MODULATORS AND DRIVERS |
| PCT/US21/35237 | HIGH PERFORMANCE OPTICAL MODULATORS AND DRIVERS |
| 17/503,078 | LARGE MODE COUPLER |
| 63/093,681 | LARGE MODE COUPLER |
| 17/102,047 | ELECTRO-OPTIC DEVICES HAVING ENGINEERED ELECTRODES |
| 62/941,139 | THIN-FILM ELECTRO-OPTIC MODULATORS |
| 17/843,906 | ELECTRO-OPTIC DEVICES HAVING ENGINEERED ELECTRODES |
| 19/666,077 | ELECTRO-OPTIC DEVICES HAVING ENGINEERED ELECTRODES |
| 202080081441.2 | ELECTRO-OPTIC DEVICES HAVING ENGINEERED ELECTRODES |
| 202511264307.7 | ELECTRO-OPTIC DEVICES HAVING ENGINEERED ELECTRODES |
| 20893221.0 | ELECTRO-OPTIC DEVICES HAVING ENGINEERED ELECTRODES |
| 2022-530905 | ELECTRO-OPTIC DEVICES HAVING ENGINEERED ELECTRODES |
| 2024-214097 | ELECTRO-OPTIC DEVICES HAVING ENGINEERED ELECTRODES |
| PCT/US20/61841 | ELECTRO-OPTIC DEVICES HAVING ENGINEERED ELECTRODES |
| 63/112,867 | BREAKING VOLTAGE-BANDWIDTH LIMIT IN INTEGRATED LITHIUM NIOBATE MODULATORS USING MICRO-STRUCTURED ELECTRODES |
| 17/532,635 | HIGH PERFORMANCE OPTICAL MODULATOR |
| 63/117,367 | HIGH PERFORMANCE OPTICAL MODULATOR |
| 18/437,513 | HIGH PERFORMANCE OPTICAL MODULATOR |
| 18/959,390 | HIGH PERFORMANCE OPTICAL MODULATOR |
| 17/556,323 | BURIED BACK REFLECTOR |
| 63/128,664 | BURIED BACK REFLECTOR |
| 17/976,622 | COMPACT LITHIUM NIOBATE PHOTONIC DEVICES HAVING IMPROVED PERFORMANCE |
| 63/273,442 | COMPACT LITHIUM NIOBATE PHOTONIC DEVICES HAVING IMPROVED PERFORMANCE |
| 19/423,686 | COMPACT LITHIUM NIOBATE PHOTONIC DEVICES HAVING IMPROVED PERFORMANCE |
| 17/558,166 | LITHIUM NIOBATE PHOTONIC DEVICES HAVING ENGINEERED LITHIUM NIOBATE, SILICON DIOXIDE, AND ELECTRODE EXTENSION THICKNESS |
| 19/666,068 | LITHIUM NIOBATE PHOTONIC DEVICES HAVING ENGINEERED LITHIUM NIOBATE, SILICON DIOXIDE, AND ELECTRODE EXTENSION THICKNESS |
| 17/980,486 | DUAL HEIGHT FUNCTIONAL COMPONENTS IN LITHIUM NIOBATE OPTICAL DEVICES |
| 63/275,809 | DUAL HEIGHT FUNCTIONAL COMPONENTS IN LITHIUM NIOBATE OPTICAL DEVICES |
| 17/980,490 | MODE CONVERTER |
| 63/276,200 | MODE CONVERTER |
| 19/193,803 | MODE CONVERTER |
| 63/287,491 | DUAL HEIGHT FUNCTIONAL COMPONENTS IN LITHIUM NIOBATE OPTICAL DEVICES |
| 18/125,644 | SINGULATION OF LITHIUM-CONTAINING PHOTONIC DEVICES |
| 63/429,471 | STEALTH DICING DIE SINGULATION |
| 19/657,684 | SINGULATION OF LITHIUM-CONTAINING PHOTONIC DEVICES |
| 18/209,415 | OPTICAL DEVICE CONFIGURED FOR STRESS MITIGATION |
| 63/352,135 | OPTICAL DEVICE CONFIGURED FOR STRESS MITIGATION |
| 19/193,780 | OPTICAL DEVICE CONFIGURED FOR STRESS MITIGATION |
| PCT/US23/25224 | OPTICAL DEVICE CONFIGURED FOR STRESS MITIGATION |
| 18/102,604 | ELECTRO-OPTIC DEVICES HAVING CLOSELY SPACED ENGINEERED ELECTRODES |
| 63/304,520 | ELECTRO-OPTIC DEVICES HAVING CLOSELY SPACED ENGINEERED ELECTRODES |
| 19/559,810 | ELECTRO-OPTIC DEVICES HAVING CLOSELY SPACED ENGINEERED ELECTRODES |
| 63/323,440 | PHOTONIC CHIP UTILIZING STEALTH DICING |
| 16/838,763 | VELOCITY MATCHED ELECTRO-OPTIC DEVICES |
| 17/896,995 | VELOCITY MATCHED ELECTRO-OPTIC DEVICES |
| 18/652,711 | VELOCITY MATCHED ELECTRO-OPTIC DEVICES |
| 18/208,818 | DIFFUSION BARRIER LAYER IN LITHIUM NIOBATE-CONTAINING PHOTONIC DEVICES |
| 63/351,723 | DIFFUSION BARRIER LAYER IN LITHIUM NIOBATE-CONTAINING PHOTONIC DEVICES |
| 19/187,834 | DIFFUSION BARRIER LAYER IN LITHIUM NIOBATE-CONTAINING PHOTONIC DEVICES |
| 18/211,170 | THIN FILM LITHIUM NIOBATE OPTICAL DEVICE HAVING AN ENGINEERED SUBSTRATE FOR HETEROGENEOUS INTEGRATION |
| 63/353,501 | THIN FILM LITHIUM NIOBATE OPTICAL DEVICE HAVING AN ENGINEERED SUBSTRATE FOR HETEROGENEOUS INTEGRATION |
| 19/087,273 | THIN FILM LITHIUM NIOBATE OPTICAL DEVICE HAVING AN ENGINEERED SUBSTRATE FOR HETEROGENEOUS INTEGRATION |
| 18/208,828 | THIN FILM LITHIUM NIOBATE HYBRID PHOTONICS PACKAGING |
| 63/351,730 | THIN FILM LITHIUM NIOBATE HYBRID PHOTONICS PACKAGING |
| 18/935,166 | THIN FILM LITHIUM NIOBATE HYBRID PHOTONICS PACKAGING |
| 16/924,767 | LOW-LOSS WAVEGUIDING STRUCTURES, IN PARTICULAR MODULATORS |
| 62/871,928 | LOW-LOSS WAVEGUIDING STRUCTURES, IN PARTICULAR MODULATORS |
| 20836102.2 | LOW-LOSS WAVEGUIDING STRUCTURES, IN PARTICULAR MODULATORS |
| 17/532,244 | LOW-LOSS WAVEGUIDING STRUCTURES, IN PARTICULAR MODULATORS |
| 18/370,370 | LOW-LOSS WAVEGUIDING STRUCTURES, IN PARTICULAR MODULATORS |
| 19/357,557 | LOW-LOSS WAVEGUIDING STRUCTURES, IN PARTICULAR MODULATORS |
| 20836102.2 | LOW-LOSS WAVEGUIDING STRUCTURES, IN PARTICULAR MODULATORS |
| 20836102.2 | LOW-LOSS WAVEGUIDING STRUCTURES, IN PARTICULAR MODULATORS |
| 20836102.2 | LOW-LOSS WAVEGUIDING STRUCTURES, IN PARTICULAR MODULATORS |
| 26164272.2 | LOW-LOSS WAVEGUIDING STRUCTURES, IN PARTICULAR MODULATORS |
| 20836102.2 | LOW-LOSS WAVEGUIDING STRUCTURES, IN PARTICULAR MODULATORS |
| 20836102.2 | LOW-LOSS WAVEGUIDING STRUCTURES, IN PARTICULAR MODULATORS |
| PCT/US20/70252 | LOW-LOSS WAVEGUIDING STRUCTURES, IN PARTICULAR MODULATORS |
| 17/016,234 | INTEGRATED ELECTRO-OPTIC FREQUENCY COMB GENERATOR |
| 62/898,051 | INTEGRATED ELECTRO-OPTIC FREQUENCY COMB GENERATOR |
| 20863549.0 | INTEGRATED ELECTRO-OPTIC FREQUENCY COMB GENERATOR |
| 17/701,952 | INTEGRATED ELECTRO-OPTIC FREQUENCY COMB GENERATOR |
| 18/213,771 | INTEGRATED ELECTRO-OPTIC FREQUENCY COMB GENERATOR |
| 20863549.0 | INTEGRATED ELECTRO-OPTIC FREQUENCY COMB GENERATOR |
| 20863549.0 | INTEGRATED ELECTRO-OPTIC FREQUENCY COMB GENERATOR |
| 20863549.0 | INTEGRATED ELECTRO-OPTIC FREQUENCY COMB GENERATOR |
| 20863549.0 | INTEGRATED ELECTRO-OPTIC FREQUENCY COMB GENERATOR |
| 20863549.0 | INTEGRATED ELECTRO-OPTIC FREQUENCY COMB GENERATOR |
| PCT/US20/50006 | INTEGRATED ELECTRO-OPTIC FREQUENCY COMB GENERATOR |
| 18/532,941 | DIFFERENTIAL DRIVING OF LITHIUM-CONTAINING ELECTRO-OPTIC DEVICES UTILIZING ENGINEERED ELECTRODES |
| 63/431,278 | DIFFERENTIAL DRIVING OF ELECTRO-OPTIC DEVICES UTILIZING ENGINEERED ELECTRODES |
| 18/665,412 | LITHIUM-CONTAINING PHOTONICS INTEGRATING PHOTODETECTING MATERIALS |
| 63/467,279 | PHOTONICS WAFER INTEGRATING PHOTODETECTING MATERIALS |
| 18/817,075 | DOUBLE BLADE DICING OF LITHIUM-CONTAINING PHOTONICS DEVICES |
| 63/536,647 | DOUBLE BLADE DICING |
| PCT/US24/44071 | DOUBLE BLADE DICING OF LITHIUM-CONTAINING PHOTONICS DEVICES |
| 18/777,425 | LOW-LOSS WAVEGUIDING STRUCTURES, IN PARTICULAR MODULATORS |
| 18/946,784 | DIFFERENTIAL DRIVE AND BINARY WEIGHTED MODULATORS |
| 63/548,510 | DIFFERENTIAL DRIVE AND BINARY WEIGHTED MODULATORS |
| 202480071986.3 | DIFFERENTIAL DRIVE AND BINARY WEIGHTED MODULATORS |
| 24892175.1 | DIFFERENTIAL DRIVE AND BINARY WEIGHTED MODULATORS |
| PCT/US24/55777 | DIFFERENTIAL DRIVE AND BINARY WEIGHTED MODULATORS |
| 18/942,189 | THIN FILM LITHIUM-CONTAINING PHOTONICS WAFER HAVING A TRAP-RICH SUBSTRATE |
| 63/548,138 | THIN FILM LITHIUM-CONTAINING PHOTONICS WAFER HAVING A TRAP RICH SUBSTRATE |
| 19/458,418 | THIN FILM LITHIUM-CONTAINING PHOTONICS WAFER HAVING A TRAP-RICH SUBSTRATE |
| 2026-527264 | THIN FILM LITHIUM-CONTAINING PHOTONICS WAFER HAVING A TRAP-RICH SUBSTRATE |
| PCT/US24/55239 | THIN FILM LITHIUM-CONTAINING PHOTONICS WAFER HAVING A TRAP-RICH SUBSTRATE |
| 18/972,332 | CONTROLLED CHIRP IN OPTICAL DEVICES |
| 63/607,485 | CONTROLLED CHIRP IN OPTICAL DEVICES |
| 19/215,108 | CONTROLLED CHIRP IN OPTICAL DEVICES |
| 202480077073.2 | CONTROLLED CHIRP IN OPTICAL DEVICES |
| 24901644.5 | CONTROLLED CHIRP IN OPTICAL DEVICES |
| PCT/US24/58950 | CONTROLLED CHIRP IN OPTICAL DEVICES |
| 19/209,416 | OPTICAL DEVICES HAVING IMPROVED MODE TRANSITIONS |
| 63/648,516 | OPTICAL DEVICES HAVING IMPROVED MODE TRANSITIONS |
| 18/991,039 | THROUGH SILICON VIA FOR THIN FILM LITHIUM-CONTAINING ELECTRO-OPTIC DEVICES |
| 63/613,588 | THROUGH SILICON VIA FOR THIN FILM LITHIUM-CONTAINING ELECTRO-OPTIC DEVICES |
| 18/988,597 | POLARIZATION ROTATION BEAM SPLITTER USABLE WITH LITHIUM CONTAINING OPTICAL DEVICES AND DUAL POLARIZATION IQ MODULATION |
| 63/613,695 | POLARIZATION ROTATION BEAM SPLITTER FOR LITHIUM CONTAINING OPTICAL DEVICES USABLE WITH DUAL POLARIZATION IQ |
| 18/991,092 | MULTILAYER THIN FILM LITHIUM-CONTAINING OPTICAL DEVICES |
| 63/613,580 | MULTILAYER THIN FILM LITHIUM-CONTAINING OPTICAL DEVICES |
| 19/227,260 | MULTILAYER THIN FILM LITHIUM-CONTAINING OPTICAL DEVICES |
| 202480080834.X | MULTILAYER THIN FILM LITHIUM-CONTAINING OPTICAL DEVICES |
| 24909130.7 | MULTILAYER THIN FILM LITHIUM-CONTAINING OPTICAL DEVICES |
| 2026-537540 | MULTILAYER THIN FILM LITHIUM-CONTAINING OPTICAL DEVICES |
| PCT/US24/61570 | MULTILAYER THIN FILM LITHIUM-CONTAINING OPTICAL DEVICES |
| 18/984,619 | HIGH SPEED ELECTRO-OPTIC MODULATOR WITH VARYING ELECTRO-OPTIC MODULATION STRENGTH |
| 63/612,228 | HIGH SPEED ELECTRO-OPTIC MODULATOR WITH TAPERING ELECTRODE SPACING |
| 19/064,628 | THIN FILM LITHIUM CONTAINING MODULATOR ARRAY USING SHORT WAVELENGTHS |
| 63/559,752 | THIN FILM LITHIUM CONTAINING MODULATOR ARRAY USING SHORT WAVELENGTHS |
| 19/069,057 | THIN FILM LITHIUM CONTAINING MODULATOR HAVING TIGHT BENDS |
| 63/561,207 | THIN FILM LITHIUM CONTAINING MODULATOR HAVING TIGHT BENDS |
| 19/395,802 | THIN FILM LITHIUM CONTAINING MODULATOR HAVING TIGHT BENDS |
| PCT/US25/18213 | THIN FILM LITHIUM CONTAINING MODULATOR HAVING TIGHT BENDS |
| 19/088,802 | PHOTONICS TRANSCEIVER INCLUDING A LITHIUM-CONTAINING TRANSMITTER |
| 63/570,134 | PHOTONICS TRANSCEIVER INCLUDING A LITHIUM-CONTAINING TRANSMITTER |
| 19/283,066 | PACKAGING OF THIN FILM LITHIUM-CONTAINING PHOTONICS INTEGRATED CIRCUITS |
| 63/676,741 | PACKAGING OF THIN FILM LITHIUM-CONTAINING PHOTONICS INTEGRATED CIRCUITS |
| 63/680,005 | ION BEAM ETCHING OF LITHIUM-CONTAINING ELECTRO-OPTIC DEVICES |
| 19/308,014 | EXTERNAL LAYER WAVEGUIDING IN THIN FILM LITHIUM-CONTAINING PHOTONIC DEVICES |
| 63/686,680 | PASSIVATION LAYER WAVEGUIDING IN THIN FILM LITHIUM-CONTAINING PHOTONIC DEVICES |
| PCT/US25/43233 | EXTERNAL LAYER WAVEGUIDING IN THIN FILM LITHIUM-CONTAINING PHOTONIC DEVICES |
| 19/334,623 | CMOS-POCKELS EFFECT MATERIAL INTEGRATED PHOTONICS DEVICES |
| 63/697,252 | CMOS-POCKELS EFFECT MATERIAL INTEGRATED PHOTONICS DEVICES |
| PCT/US25/47252 | CMOS-POCKELS EFFECT MATERIAL INTEGRATED PHOTONICS DEVICES |
| 19/397,685 | INTEGRATION OF LITHIUM NIOBATE PHOTONICS DEVICES |
| 63/724,843 | INTEGRATION OF LITHIUM NIOBATE PHOTONICS DEVICES |
| PCT/US25/56728 | INTEGRATION OF LITHIUM NIOBATE PHOTONICS DEVICES |
| 114145817 | INTEGRATION OF LITHIUM NIOBATE PHOTONICS DEVICES |
| 19/401,045 | BALUN-BASED DIFFERENTIAL OPTICAL MODULATOR |
| 63/725,469 | BALUN-BASED DIFFERENTIAL OPTICAL MODULATOR |
| PCT/US25/57151 | BALUN-BASED DIFFERENTIAL OPTICAL MODULATOR |
| 19/408,075 | ENCAPSULATION OF THIN FILM LITHIUM-CONTAINING FILMS FOR 3 DIMENSIONAL INTEGRATION |
| 63/728,094 | ENCAPSULATION OF THIN FILM LITHIUM-CONTAINING FILMS FOR 3 DIMENSIONAL INTEGRATION |
| 19/446,797 | THIN FILM LITHIUM-CONTAINING ELECTRO-OPTIC DEVICES HAVING COMPACT TAPERS |
| 63/744,681 | THIN FILM LITHIUM-CONTAINING ELECTRO-OPTIC DEVICES HAVING COMPACT TAPERS |
| PCT/US26/10992 | THIN FILM LITHIUM-CONTAINING ELECTRO-OPTIC DEVICES HAVING COMPACT TAPERS |
| 19/446,800 | THIN FILM LITHIUM-CONTAINING COMPACT ELECTRO-OPTIC DEVICES |
| 63/744,684 | THIN FILM LITHIUM-CONTAINING COMPACT ELECTRO-OPTIC MODULATOR |
| 63/744,688 | THIN FILM LITHIUM-CONTAINING HIGH BANDWIDTH LOW LOSS ELECTRO-OPTIC DEVICES |
| 19/548,869 | HYBRID MODE MULTIPLEXING OPTICAL MODULATOR |
| 63/763,145 | MODE MULTIPLEXING OPTICAL MODULATOR |
| 19/548,858 | EFFICIENT OPTICAL MODULATORS |
| 63/763,148 | EFFICIENT OPTICAL MODULATOR |
| PCT/US26/16494 | EFFICIENT OPTICAL MODULATORS |
| 19/363,497 | ELECTRO-OPTIC DEVICE HAVING ENGINEERED ELECTRODES |
| 63/885,003 | CMOS-POCKELS MATERIAL INTEGRATION CO-DESIGN |
| 19/683,591 | ELECTRO-OPTIC DEVICES HAVING EFFICIENT ELECTRODES |
| 63/809,898 | ELECTRO-OPTIC DEVICES HAVING EFFICIENT ELECTRODES |
| PCT/US26/29122 | ELECTRO-OPTIC DEVICES HAVING EFFICIENT ELECTRODES |
| 63/885,007 | CMOS-POCKELS MATERIAL INTEGRATION CO-DESIGN DRIVERS |
| 63/885,020 | CMOS-POCKELS MATERIAL INTEGRATION CO-DESIGN DELAY CONTROL |
| 63/885,021 | CMOS-POCKELS MATERIAL INTEGRATION CO-DESIGN OPTICAL DIGITAL-ANALOG CONVERTER |
| 63/842,603 | LOW VPIL OPTICAL MODULATORS |
| 63/859,778 | MITIGATION OF PARASITIC MODES IN ELECTRO-OPTIC MODULATORS |
| 63/875,800 | METAMATERIAL OPTICAL COUPLER |
| 19/765,112 | PATTERNED TFLC WAFER BONDING WITH SILICON PHOTONICS WAFER |
| 63/860,558 | PATTERNED TFLC WAFER BONDING WITH SILICON PHOTONICS WAFER |
| 63/876,649 | STRAY LIGHT REJECTION IN THIN FILM LITHIUM-CONTAINING PHOTONIC DEVICES |
| 63/904,480 | THIN FILM LITHIUM-CONTAINING MICRODISK RESONATOR |
| 63/910,495 | MULTI-METAL THROUGH DIELECTRIC VIA IN THIN FILM LITHIUM-CONTAINING PHOTONIC DEVICES |
| 63/904,389 | ELECTRO-OPTIC DEVICE HAVING TIGHT BENDS |
| 63/926,243 | OPEN COLLECTOR TERMINATION IN PHOTONICS DEVICES |
| 63/926,132 | ENGINEERED TOP DIELECTRIC FOR ELECTRO-OPTIC MODULATORS |
| 63/938,954 | THERMAL PHASE SHIFTER WITH PACKED WAVEGUIDES |
| 63/930,454 | OPEN COLLECTOR TERMINATION IN PHOTONICS DEVICES |
| 64/005,331 | SYNCHRONOUSLY DRIVEN COUPLING MODULATED OPTICAL RESONATORS |
| 64/011,601 | ELECTRO-OPTIC COMB |
| 64/018,113 | ENGINEERED ELECTRODES HAVING TAILORED ELECTRODE SIGNAL VELOCITY |
| 64/015,621 | ENGINEERED TERMINATION NETWORK |
| 64/046,775 | HERMETIC ENCAPSULATION PROVIDING IMPROVED INSERTION LOSS |
| 64/068,737 | LITHIUM-CONTAINING PHOTODETECTOR |
| 64/050,751 | VARIABLE WIDTH OXIDE TRENCH |
| 64/072,723 | ENGINEERED OPTICAL LAYERS |
| 19/730,617 | NEGATIVE LEDGE FORMED USING STEALTH DICING |
| 64/118,798 | SUPPRESSED REFLECTIONS FOR WAFER-LEVEL TESTING |
| 64/118,164 | MITIGATION OF POLARIZATION DEPENDENT LOSSES USING ACTIVE TUNING |
